? 2009 ixys corporation, all rights reserved ds100163(06/09) v ces = 1200v i c100 = 50a v ce(sat) 4.2v t fi(typ) = 64ns genx3 tm 1200v igbts w/ diode high-speed pt igbts for 20 - 50 khz switching symbol test conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c ( chip capability ) 95 a i c100 t c = 100c 50 a i cm t c = 25c, 1ms 240 a i a t c = 25c 40 a e as t c = 25c 750 mj ssoa v ge = 15v, t j = 125c, r g = 3 i cm = 100 a (rbsoa) clamped inductive load v ce v ces p c t c = 25c 460 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10 260 c m d mounting torque ( ixgk ) 1.13/10 nm/lb.in. f c mounting force ( ixgx ) 20..120/4.5..14.6 n/lb. weight to-264 10 g plus247 6 g advance technical information features z optimized for low switching losses z square rbsoa z high avalanche capability z anti-parallel ultra fast diode z international standard packages advantages z high power density z low gate drive requirement applications z high frequency power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts IXGK50N120C3H1 ixgx50n120c3h1 g = gate e = emitter c = collector tab = collector (tab) to-264 (ixgk) e g c e plus247 tm (ixgx) g c (tab) e symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 250 a t j = 125c, note 1 14 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 40a, v ge = 15v, note 2 4.2 v t j = 125c 2.6 v
ixys reserves the right to change limits, test conditions, and dimensions. IXGK50N120C3H1 ixgx50n120c3h1 symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. g fs i c = 40a, v ce = 10v, note 2 24 40 s c ies 4250 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 455 pf c res 120 pf q g 196 nc q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 24 nc q gc 84 nc t d(on) 31 ns t ri 36 ns e on 2.0 mj t d(off) 123 ns t fi 64 ns e off 0.63 1.2 mj t d(on) 23 ns t ri 37 ns e on 3.0 mj t d(off) 170 ns t fi 315 ns e off 2.1 mj r thjc 0.27 c/w r thck 0.15 c/w inductive load, t j = 125c i c = 40a, v ge = 15v v ce = 0.5 ? v ces , r g = 2 note 3 inductive load, t j = 25c i c = 40a, v ge = 15v v ce = 0.5 ? v ces , r g = 2 note 3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. reverse diode (fred) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v f i f = 50a, v ge = 0v, note 1 2.1 2.4 v t j = 125c 2.3 v i rm 50 a t rr 75 ns r thjc 0.30 c/w i f = 50a, v ge = 0v, -di f /dt = 2500a/ s, v r = 800v notes: 1. part must be heatsunk for high-temp i ces measurement. 2. pulse test, t 300 s, duty cycle, d 2%. 3. switching times & energy loses may increase for higher v ce (clamp), t j or r g . terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) plus247 tm (ixgx) outline to-264 (ixgk) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190
? 2009 ixys corporation, all rights reserved fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 0123456 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ 25oc 0 25 50 75 100 125 150 175 200 225 250 275 0 3 6 9 12 15 18 21 24 27 30 v ce - volts i c - amperes v ge = 15v 13v 7v 9v 11v 5v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 100a i c = 50a i c = 25a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 5 6 7 8 9 101112131415 v ge - volts v ce - volts i c = 100 a t j = 25oc 50 a 25 a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc IXGK50N120C3H1 ixgx50n120c3h1
ixys reserves the right to change limits, test conditions, and dimensions. IXGK50N120C3H1 ixgx50n120c3h1 ixys ref: g_50n120c3h1(7n)6-19-09 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 10 20 30 40 50 60 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 200 400 600 800 1000 1200 v ce - volts i c - amperes t j = 125oc r g = 2 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v ge - volts v ce = 600v i c = 50a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2009 ixys corporation, all rights reserved fig. 12. inductive switching energy loss vs. gate resistance 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 r g - ohms e off - millijoules 2 3 4 5 6 7 8 9 10 11 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 17. inductive turn-off switching times vs. junction temperature 0 50 100 150 200 250 300 350 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f i - nanoseconds 110 120 130 140 150 160 170 180 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 15. inductive turn-off switching times vs. gate resistance 0 50 100 150 200 250 300 350 400 450 500 2 3 4 5 6 7 8 9 10 11 12 13 14 15 r g - ohms t f i - nanoseconds 100 150 200 250 300 350 400 450 500 550 600 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 13. inductive switching energy loss vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 30 40 50 60 70 80 i c - amperes e off - millijoules 0 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 7 8 9 10 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 16. inductive turn-off switching times vs. collector current 0 50 100 150 200 250 300 350 400 450 20 30 40 50 60 70 80 i c - amperes t f i - nanoseconds 80 100 120 140 160 180 200 220 240 260 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc IXGK50N120C3H1 ixgx50n120c3h1
ixys reserves the right to change limits, test conditions, and dimensions. IXGK50N120C3H1 ixgx50n120c3h1 ixys ref: g_50n120c3h1(7n)6-19-09 fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 80 90 100 20 30 40 50 60 70 80 i c - amperes t r i - nanoseconds 14 16 18 20 22 24 26 28 30 32 34 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc, 25oc fig. 20. inductive turn-on switching times vs. junction temperature 20 40 60 80 100 120 140 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r i - nanoseconds 20 22 24 26 28 30 32 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 23456789101112131415 r g - ohms t r i - nanoseconds 15 20 25 30 35 40 45 50 55 60 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 40a i c = 80a
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